IRG4PC60FPBF
- Mfr.Part #
- IRG4PC60FPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 90A 520W TO247AC
- Stock
- 162
- In Stock :
- 162
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Mount :
- Through Hole
- Transistor Application :
- POWER CONTROL
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-247-3
- Max Collector Current :
- 90A
- Collector Emitter Breakdown Voltage :
- 600V
- Td (on/off) @ 25°C :
- 42ns/310ns
- Published :
- 2000
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 520W
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 600V
- Width :
- 5.3086mm
- Factory Lead Time :
- 14 Weeks
- REACH SVHC :
- Unknown
- Input Type :
- Standard
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.8V
- RoHS Status :
- ROHS3 Compliant
- Height :
- 20.7mm
- Turn On Delay Time :
- 42 ns
- Turn Off Time-Nom (toff) :
- 770 ns
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 1.8V
- Turn-Off Delay Time :
- 310 ns
- Switching Energy :
- 300μJ (on), 4.6mJ (off)
- Vce(on) (Max) @ Vge, Ic :
- 1.8V @ 15V, 60A
- Current - Collector Pulsed (Icm) :
- 360A
- Turn On Time :
- 105 ns
- Test Condition :
- 480V, 60A, 5 Ω, 15V
- ECCN Code :
- EAR99
- Additional Feature :
- Fast
- Rise Time :
- 39ns
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-247AC
- Length :
- 15.87mm
- Gate Charge :
- 290nC
- Radiation Hardening :
- No
- Gate-Emitter Voltage-Max :
- 20V
- Gate-Emitter Thr Voltage-Max :
- 6V
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 520W
- Current Rating :
- 90A
- Datasheets
- IRG4PC60FPBF

IRG4PC60FPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
·Fast Optimized for medium operating frequencies( 1-5 kHz in hard switching,>20 kHz in resonant mode).
·Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
·Industry standard TO-247AC package
·Lead-Free
IRG4PC60FPBF Description
IRG4PC60FPBF is a insulated gate bipolar transistor.The generation 4 IGBT's offer highest efficiency available.IGBT's optimized for specified application conditions . The device is designed for best performance when used with IR Hexfred &IR Fred companion diodes.
STM32F072CBU6 Features
? Core: Arm? 32-bit Cortex?-M0 CPU, frequency
up to 48 MHz
? Memories
– 64 to 128 Kbytes of Flash memory
– 16 Kbytes of SRAM with HW parity
? CRC calculation unit
? Reset and power management
? Clock management
? Up to 87 fast I/Os
? 7-channel DMA controller
?HDMI CEC wakeup on header reception
? Serial wire debug (SWD)
? 96-bit unique ID
? All packages ECOPACK?2
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