IRG4PC50WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

200W

Mounting Type :

Through Hole

Width :

5.3mm

Radiation Hardening :

No

Additional Feature :

LOW CONDUCTION LOSS

Switching Energy :

80μJ (on), 320μJ (off)

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

272 ns

Package / Case :

TO-247-3

Rise Time :

33ns

Collector Emitter Breakdown Voltage :

600V

Turn On Delay Time :

46 ns

Packaging :

Bulk

Gate-Emitter Thr Voltage-Max :

6V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Power Dissipation :

200W

Transistor Application :

POWER CONTROL

Collector Emitter Voltage (VCEO) :

2.3V

Number of Elements :

1

Number of Terminations :

3

Element Configuration :

Dual

Published :

2000

Current - Collector Pulsed (Icm) :

220A

Weight :

38.000013g

Termination :

Through Hole

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 27A

Voltage - Rated DC :

600V

Max Collector Current :

55A

Case Connection :

COLLECTOR

Test Condition :

480V, 27A, 5 Ω, 15V

JEDEC-95 Code :

TO-247AC

Input Type :

Standard

Td (on/off) @ 25°C :

46ns/120ns

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Turn On Time :

74 ns

Polarity/Channel Type :

N-Channel

Factory Lead Time :

14 Weeks

Gate-Emitter Voltage-Max :

20V

ECCN Code :

EAR99

Current Rating :

55A

Collector Emitter Saturation Voltage :

2.3V

Height :

20.2946mm

Fall Time-Max (tf) :

86ns

Length :

15.875mm

Turn-Off Delay Time :

120 ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate Charge :

180nC