IRG4PC50SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Rise Time :

30ns

Test Condition :

480V, 41A, 5 Ω, 15V

Max Power Dissipation :

200W

Gate-Emitter Voltage-Max :

20V

Lead Free :

Lead Free

Element Configuration :

Dual

Power Dissipation :

200W

Factory Lead Time :

14 Weeks

Polarity/Channel Type :

N-Channel

Published :

2000

Number of Pins :

3

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

250

Collector Emitter Breakdown Voltage :

600V

Switching Energy :

720μJ (on), 8.27mJ (off)

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

1.36V @ 15V, 41A

Collector Emitter Saturation Voltage :

1.36V

Fall Time-Max (tf) :

600ns

Width :

5.3mm

Turn On Time :

62 ns

Turn-Off Delay Time :

650 ns

Input Type :

Standard

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

1700 ns

Gate-Emitter Thr Voltage-Max :

6V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

ECCN Code :

EAR99

Turn On Delay Time :

33 ns

Length :

15.875mm

Max Collector Current :

70A

Current Rating :

70A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

COLLECTOR

Td (on/off) @ 25°C :

33ns/650ns

Mount :

Through Hole

Package / Case :

TO-247-3

Terminal Position :

Single

Current - Collector Pulsed (Icm) :

140A

Gate Charge :

180nC

Voltage - Rated DC :

600V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

JEDEC-95 Code :

TO-247AC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

1.36V

Height :

20.2946mm