IRG4PC50KPBF

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Mfr.Part #
IRG4PC50KPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IRG4PC50 - DISCRETE IGBT WITHOUT
Stock
205
In Stock :
205

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Rise Time :
34ns
Package / Case :
TO-247-3
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Td (on/off) @ 25°C :
38ns/160ns
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Fall Time-Max (tf) :
120ns
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 30A
RoHS Status :
RoHS Compliant
ECCN Code :
EAR99
Number of Elements :
1
Mounting Type :
Through Hole
Number of Pins :
3
Turn-Off Delay Time :
160 ns
Turn Off Time-Nom (toff) :
430 ns
Packaging :
Bulk
Collector Emitter Saturation Voltage :
1.84V
Voltage - Rated DC :
600V
Test Condition :
480V, 30A, 5 Ω, 15V
Length :
15.875mm
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
30
Turn On Time :
72 ns
Gate-Emitter Thr Voltage-Max :
6V
Gate-Emitter Voltage-Max :
20V
Max Collector Current :
52A
Max Power Dissipation :
200W
Additional Feature :
LOW CONDUCTION LOSS
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
250
Gate Charge :
200nC
Number of Terminations :
3
Height :
20.3mm
Mount :
Through Hole
Radiation Hardening :
No
Turn On Delay Time :
38 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
200W
Collector Emitter Breakdown Voltage :
600V
Polarity/Channel Type :
N-Channel
Width :
5.3mm
Case Connection :
COLLECTOR
REACH SVHC :
No SVHC
Switching Energy :
490μJ (on), 680μJ (off)
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
2.2V
Transistor Application :
POWER CONTROL
Factory Lead Time :
14 Weeks
Input Type :
Standard
Current - Collector Pulsed (Icm) :
104A
JEDEC-95 Code :
TO-247AC
Published :
2000
Current Rating :
52A
Datasheets
IRG4PC50KPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4PC50KPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, IRG4PC50KPBF pinout, IRG4PC50KPBF datasheet PDF, IRG4PC50KPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4PC50KPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4PC50KPBF


IRG4PC50KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4PC50KPBF Description


An INSULATED GATE BIPOLAR TRANSISTOR is IRG4PC50KPBF.



IRG4PC50KPBF Features


?Low conduction losses combined with quick switching


?Compared to earlier generations, the most recent design offers tighter parameter dispersion and more efficiency.


?Lead-Free



IRG4PC50KPBF Applications


Switching applications


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