IRG4PC50KPBF
- Mfr.Part #
- IRG4PC50KPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRG4PC50 - DISCRETE IGBT WITHOUT
- Stock
- 205
- In Stock :
- 205
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Rise Time :
- 34ns
- Package / Case :
- TO-247-3
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Td (on/off) @ 25°C :
- 38ns/160ns
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Fall Time-Max (tf) :
- 120ns
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 30A
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 160 ns
- Turn Off Time-Nom (toff) :
- 430 ns
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- 1.84V
- Voltage - Rated DC :
- 600V
- Test Condition :
- 480V, 30A, 5 Ω, 15V
- Length :
- 15.875mm
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn On Time :
- 72 ns
- Gate-Emitter Thr Voltage-Max :
- 6V
- Gate-Emitter Voltage-Max :
- 20V
- Max Collector Current :
- 52A
- Max Power Dissipation :
- 200W
- Additional Feature :
- LOW CONDUCTION LOSS
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 250
- Gate Charge :
- 200nC
- Number of Terminations :
- 3
- Height :
- 20.3mm
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Turn On Delay Time :
- 38 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 200W
- Collector Emitter Breakdown Voltage :
- 600V
- Polarity/Channel Type :
- N-Channel
- Width :
- 5.3mm
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Switching Energy :
- 490μJ (on), 680μJ (off)
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Transistor Application :
- POWER CONTROL
- Factory Lead Time :
- 14 Weeks
- Input Type :
- Standard
- Current - Collector Pulsed (Icm) :
- 104A
- JEDEC-95 Code :
- TO-247AC
- Published :
- 2000
- Current Rating :
- 52A
- Datasheets
- IRG4PC50KPBF

IRG4PC50KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC50KPBF Description
An INSULATED GATE BIPOLAR TRANSISTOR is IRG4PC50KPBF.
IRG4PC50KPBF Features
?Low conduction losses combined with quick switching
?Compared to earlier generations, the most recent design offers tighter parameter dispersion and more efficiency.
?Lead-Free
IRG4PC50KPBF Applications
Switching applications
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