IRG4PC40UPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

160W

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

110 ns

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

600V

REACH SVHC :

No SVHC

Packaging :

Bulk

Lead Free :

Contains Lead, Lead Free

Collector Emitter Saturation Voltage :

2.1V

Weight :

38.000013g

Termination :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 20A

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Gate-Emitter Voltage-Max :

20V

Case Connection :

COLLECTOR

Package / Case :

TO-247-3

Mount :

Through Hole

Turn On Time :

49 ns

Switching Energy :

320μJ (on), 350μJ (off)

Number of Elements :

1

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

2.1V

Rise Time :

19ns

Mounting Type :

Through Hole

Input Capacitance :

2.1nF

Turn Off Time-Nom (toff) :

380 ns

Gate-Emitter Thr Voltage-Max :

6V

Test Condition :

480V, 20A, 10 Ω, 15V

ECCN Code :

EAR99

Height :

20.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

15.875mm

Td (on/off) @ 25°C :

34ns/110ns

Factory Lead Time :

14 Weeks

Power Dissipation :

160W

Published :

2000

Radiation Hardening :

No

Current - Collector Pulsed (Icm) :

160A

Current Rating :

40A

Turn On Delay Time :

34 ns

Width :

5.3mm

Input Type :

Standard

Number of Pins :

3

Max Collector Current :

40A

Collector Emitter Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Gate Charge :

100nC

JEDEC-95 Code :

TO-247AC