IRG4PC40KDPBF
- Mfr.Part #
- IRG4PC40KDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 42A 160W TO247AC
- Stock
- 443
- In Stock :
- 443
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Voltage (VCEO) :
- 2.6V
- Current - Collector Pulsed (Icm) :
- 84A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Current Rating :
- 42A
- Factory Lead Time :
- 14 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Switching Energy :
- 950μJ (on), 760μJ (off)
- Gate-Emitter Thr Voltage-Max :
- 6V
- Case Connection :
- COLLECTOR
- Turn On Delay Time :
- 53 ns
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Length :
- 15.875mm
- REACH SVHC :
- No SVHC
- Test Condition :
- 480V, 25A, 10 Ω, 15V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 25A
- Turn-Off Delay Time :
- 110 ns
- Gate-Emitter Voltage-Max :
- 20V
- Mount :
- Through Hole
- Input Type :
- Standard
- Published :
- 2000
- Lead Free :
- Lead Free
- Turn Off Time-Nom (toff) :
- 360 ns
- RoHS Status :
- ROHS3 Compliant
- Turn On Time :
- 89 ns
- Width :
- 5.3mm
- Max Power Dissipation :
- 160W
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-247AC
- Collector Emitter Saturation Voltage :
- 2.1V
- Collector Emitter Breakdown Voltage :
- 600V
- Transistor Application :
- POWER CONTROL
- Rise Time :
- 37ns
- Height :
- 20.2946mm
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 600V
- Power Dissipation :
- 160W
- Package / Case :
- TO-247-3
- Fall Time-Max (tf) :
- 150ns
- Gate Charge :
- 120nC
- Polarity/Channel Type :
- N-Channel
- Td (on/off) @ 25°C :
- 53ns/110ns
- Max Collector Current :
- 42A
- Reverse Recovery Time :
- 42 ns
- Datasheets
- IRG4PC40KDPBF

IRG4PC40KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
Description
The IRG4PC40KDPBF is an Insulated Gate Bipolar Transistor with a soft recovery diode that operates at ultrafast speeds. It is designed for high operating frequencies of >5kHz and has a short-circuit rating of 10μs at 125°C with VGE = 15V. The generation 4 IGBT design is more efficient and has a narrower parameter distribution than the generation 3 design. For usage in bridge designs, the IGBT comes with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes. The IGBT performance of the HEXFREDTM diodes was optimized. Snubbing is required less or not at all for reduced recovery characteristics.
Features
-
Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
-
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10μs @125°C, VGE=15V
-
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
-
Industry standard TO-247AC package
-
Lead-Free
Applications
-
Power Management
-
Sensing & Instrumentation
-
Consumer Electronics
-
Alternative Energy
-
Maintenance & Repair
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