IRG4PC30WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Fall Time-Max (tf) :

100ns

Collector Emitter Voltage (VCEO) :

2.7V

Collector Emitter Breakdown Voltage :

600V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mounting Type :

Through Hole

Gate-Emitter Thr Voltage-Max :

6V

Additional Feature :

LOW CONDUCTION LOSS

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Element Configuration :

Dual

Switching Energy :

130µJ (on), 130µJ (off)

Packaging :

Bulk

Power Dissipation :

100W

JEDEC-95 Code :

TO-247AC

Current Rating :

23A

Package / Case :

TO-247-3

Gate-Emitter Voltage-Max :

20V

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

REACH SVHC :

No SVHC

Number of Elements :

1

Number of Terminations :

3

Number of Pins :

3

Turn On Time :

41 ns

Voltage - Rated DC :

600V

Turn Off Time-Nom (toff) :

300 ns

Max Collector Current :

23A

Collector Emitter Saturation Voltage :

2.7V

Radiation Hardening :

No

Gate Charge :

51nC

Max Power Dissipation :

100W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

38.000013g

Terminal Position :

Single

Case Connection :

COLLECTOR

Current - Collector Pulsed (Icm) :

92A

RoHS Status :

RoHS Compliant

Input Type :

Standard

Termination :

Through Hole

Td (on/off) @ 25°C :

25ns/99ns

Operating Temperature :

-55°C~150°C TJ

Height :

20.2946mm

Width :

5.3mm

Test Condition :

480V, 12A, 23 Ω, 15V

Factory Lead Time :

14 Weeks

Length :

15.875mm

Transistor Application :

POWER CONTROL

Published :

2000

Rise Time :

16ns

Mount :

Through Hole