IRG4PC30UPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

6V

Input Type :

Standard

ECCN Code :

EAR99

Switching Energy :

160μJ (on), 200μJ (off)

Max Power Dissipation :

100W

Turn Off Time-Nom (toff) :

320 ns

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Fall Time-Max (tf) :

150ns

Transistor Application :

POWER CONTROL

Turn On Time :

33 ns

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 12A

Published :

2000

JEDEC-95 Code :

TO-247AC

Current Rating :

23A

Power Dissipation :

100W

Td (on/off) @ 25°C :

17ns/78ns

Mount :

Through Hole

Lead Free :

Contains Lead, Lead Free

Collector Emitter Voltage (VCEO) :

2.1V

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Rise Time :

9.6ns

Number of Pins :

3

Element Configuration :

Single

Packaging :

Bulk

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

Gate-Emitter Voltage-Max :

20V

Collector Emitter Saturation Voltage :

2.1V

Collector Emitter Breakdown Voltage :

600V

Factory Lead Time :

14 Weeks

Radiation Hardening :

No

Mounting Type :

Through Hole

Test Condition :

480V, 12A, 23 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Pulsed (Icm) :

92A

Termination :

Through Hole

Width :

5.3mm

Max Collector Current :

23A

Length :

15.875mm

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

600V

Number of Terminations :

3

Number of Elements :

1

Height :

20.2946mm

Gate Charge :

50nC