IRG4PC30UDPBF
- Mfr.Part #
- IRG4PC30UDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 23A 100W TO247AC
- Stock
- 46
- In Stock :
- 46
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Current Rating :
- 23A
- Turn On Time :
- 62 ns
- Input Type :
- Standard
- Current - Collector Pulsed (Icm) :
- 92A
- Switching Energy :
- 380μJ (on), 160μJ (off)
- Number of Elements :
- 1
- Factory Lead Time :
- 14 Weeks
- Collector Emitter Saturation Voltage :
- 2.1V
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 12A
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Td (on/off) @ 25°C :
- 40ns/91ns
- Turn On Delay Time :
- 40 ns
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Test Condition :
- 480V, 12A, 23 Ω, 15V
- Voltage - Rated DC :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Gate-Emitter Thr Voltage-Max :
- 6V
- Package / Case :
- TO-247-3
- Turn-Off Delay Time :
- 91 ns
- JEDEC-95 Code :
- TO-247AC
- Max Collector Current :
- 23A
- REACH SVHC :
- No SVHC
- Reverse Recovery Time :
- 42 ns
- Mount :
- Through Hole
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Gate Charge :
- 50nC
- Height :
- 20.3mm
- Case Connection :
- COLLECTOR
- Transistor Application :
- POWER CONTROL
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Published :
- 2000
- ECCN Code :
- EAR99
- Length :
- 15.875mm
- Rise Time :
- 21ns
- Termination :
- Through Hole
- Number of Pins :
- 3
- Width :
- 5.3mm
- Max Power Dissipation :
- 100W
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Gate-Emitter Voltage-Max :
- 20V
- Collector Emitter Breakdown Voltage :
- 600V
- Turn Off Time-Nom (toff) :
- 300 ns
- Power Dissipation :
- 100W
- Datasheets
- IRG4PC30UDPBF

IRG4PC30UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC30UDPBF Description
IRG4PC30UDPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRG4PC30UDPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT. Infineon Technologies IRG4PC30UDPBF half-bridge gate driver is used in isolated dc-to-dc power supply modules, and solar inverters.
IRG4PC30UDPBF Features
Floating channel designed for bootstrap operation
Undervoltage lockout
Combines low conduction losses with high switching speed
Tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with ultrafast, ultrasoft recovery antiparallel diodes
IRG4PC30UDPBF Applications
Light vehicles
Power Management (SMPS)
Reference Design
Power tools
Robotics
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