IRG4PC30FDPBF

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Mfr.Part #
IRG4PC30FDPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 31A 100W TO247AC
Stock
1,904
In Stock :
1,904

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Test Condition :
480V, 17A, 23 Ω, 15V
Turn Off Time-Nom (toff) :
620 ns
Number of Elements :
1
Input Type :
Standard
Power Dissipation :
100W
REACH SVHC :
No SVHC
Voltage - Rated DC :
600V
Collector Emitter Voltage (VCEO) :
600V
Width :
5.3mm
Collector Emitter Breakdown Voltage :
600V
Mounting Type :
Through Hole
Published :
2000
Package / Case :
TO-247-3
Weight :
38.000013g
Switching Energy :
630μJ (on), 1.39mJ (off)
Turn On Time :
69 ns
Additional Feature :
FAST SWITCHING, ULTRA FAST SOFT RECOVERY
Factory Lead Time :
14 Weeks
ECCN Code :
EAR99
Max Power Dissipation :
100W
Td (on/off) @ 25°C :
42ns/230ns
Case Connection :
COLLECTOR
Length :
15.875mm
Collector Emitter Saturation Voltage :
1.99V
Operating Temperature :
-55°C~150°C TJ
Rise Time :
26ns
Radiation Hardening :
No
Max Collector Current :
31A
Number of Terminations :
3
Continuous Collector Current :
31A
Gate-Emitter Voltage-Max :
20V
Transistor Application :
POWER CONTROL
Current - Collector Pulsed (Icm) :
120A
Mount :
Through Hole
Current Rating :
31A
Height :
24.99mm
Turn-Off Delay Time :
230 ns
Lead Free :
Contains Lead, Lead Free
JEDEC-95 Code :
TO-247AC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reverse Recovery Time :
42 ns
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Packaging :
Bulk
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Gate Charge :
51nC
Vce(on) (Max) @ Vge, Ic :
1.8V @ 15V, 17A
Turn On Delay Time :
42 ns
Max Junction Temperature (Tj) :
150°C
Gate-Emitter Thr Voltage-Max :
6V
Number of Pins :
3
Datasheets
IRG4PC30FDPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4PC30FDPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, IRG4PC30FDPBF pinout, IRG4PC30FDPBF datasheet PDF, IRG4PC30FDPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4PC30FDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4PC30FDPBF


IRG4PC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

irg4pc30fdpbf Description

The IRG4PC30FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED? ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.

irg4pc30fdpbf Features

? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
? Industry standard TO-247AC package
? Lead-Free

irg4pc30fdpbf Applications

variable-frequency drives (VFDs) /electric cars /trains /variable-speed refrigerators /lamp ballasts /arc-welding machines /air conditioners.
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