IRG4IBC30WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

JEDEC-95 Code :

TO-220AB

Transistor Application :

POWER CONTROL

Max Power Dissipation :

45W

Switching Energy :

130µJ (on), 130µJ (off)

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

600V

Mount :

Through Hole

Input Type :

Standard

Case Connection :

Isolated

Published :

2004

Turn On Delay Time :

25 ns

Rise Time :

16ns

Number of Terminations :

3

Test Condition :

480V, 12A, 23 Ω, 15V

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

2.7V

Turn On Time :

41 ns

Power Dissipation :

45W

Max Collector Current :

17A

Turn Off Time-Nom (toff) :

300 ns

Radiation Hardening :

No

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Element Configuration :

Dual

Length :

10.6172mm

Height :

14.224mm

Collector Emitter Breakdown Voltage :

600V

Current - Collector Pulsed (Icm) :

92A

Package / Case :

TO-220-3 Full Pack

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2.1V

Fall Time-Max (tf) :

100ns

Gate-Emitter Voltage-Max :

20V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Gate-Emitter Thr Voltage-Max :

6V

Td (on/off) @ 25°C :

25ns/99ns

Additional Feature :

LOW CONDUCTION LOSS

Gate Charge :

51nC

Terminal Position :

Single

Packaging :

Tube

Transistor Element Material :

SILICON

Current Rating :

17A

Lead Free :

Lead Free

Number of Elements :

1

Width :

4.826mm

Factory Lead Time :

16 Weeks

Turn-Off Delay Time :

99 ns