IRG4IBC30SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

600V

Max Collector Current :

23.5A

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Fall Time-Max (tf) :

590ns

Gate Charge :

50nC

Height :

16.12mm

Collector Emitter Voltage (VCEO) :

1.6V

Current Rating :

23.5A

Transistor Application :

POWER CONTROL

Lead Free :

Contains Lead, Lead Free

Case Connection :

Isolated

Element Configuration :

Dual

Polarity/Channel Type :

N-Channel

Termination :

Through Hole

Radiation Hardening :

No

Terminal Position :

Single

Power Dissipation :

45W

Number of Terminations :

3

Gate-Emitter Voltage-Max :

20V

JEDEC-95 Code :

TO-220AB

Gate-Emitter Thr Voltage-Max :

6V

Published :

2004

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

1550 ns

Factory Lead Time :

16 Weeks

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 18A

Collector Emitter Saturation Voltage :

1.6V

Turn On Time :

40 ns

Max Power Dissipation :

45W

Weight :

2.299997g

Width :

4.826mm

Input Type :

Standard

Number of Elements :

1

ECCN Code :

EAR99

Turn On Delay Time :

22 ns

Switching Energy :

260μJ (on), 3.45mJ (off)

Length :

10.6172mm

Rise Time :

19ns

Test Condition :

480V, 18A, 23 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Current - Collector Pulsed (Icm) :

47A

Package / Case :

TO-220-3 Full Pack

Voltage - Rated DC :

600V

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Td (on/off) @ 25°C :

22ns/540ns

Mount :

Through Hole

Turn-Off Delay Time :

540 ns

Number of Pins :

3