IRG4IBC20WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Pins :

3

Published :

2004

Terminal Position :

Single

Switching Energy :

60μJ (on), 80μJ (off)

Current - Collector Pulsed (Icm) :

52A

Gate Charge :

26nC

Collector Emitter Voltage (VCEO) :

2.6V

Package / Case :

TO-220-3 Full Pack

Input Type :

Standard

Height :

14.224mm

Length :

10.7442mm

Mount :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 6.5A

Power Dissipation :

34W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Gate-Emitter Voltage-Max :

20V

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Test Condition :

480V, 6.5A, 50 Ω, 15V

Packaging :

Tube

Fall Time-Max (tf) :

96ns

Radiation Hardening :

No

Turn Off Time-Nom (toff) :

300 ns

Additional Feature :

LOW CONDUCTION LOSS

Collector Emitter Saturation Voltage :

2.16V

Element Configuration :

Dual

Turn On Time :

36 ns

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Voltage - Rated DC :

600V

Transistor Element Material :

SILICON

Case Connection :

Isolated

Width :

4.826mm

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Number of Elements :

1

Rise Time :

14ns

Gate-Emitter Thr Voltage-Max :

6V

Max Collector Current :

12A

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

22ns/110ns

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Termination :

Through Hole

Current Rating :

11.8A

Number of Terminations :

3

ECCN Code :

EAR99

Max Power Dissipation :

34W