IRG4IBC20WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Rise Time :

14ns

Max Collector Current :

12A

Additional Feature :

LOW CONDUCTION LOSS

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Turn On Time :

36 ns

Terminal Position :

Single

Power Dissipation :

34W

Voltage - Rated DC :

600V

Collector Emitter Saturation Voltage :

2.16V

Gate-Emitter Voltage-Max :

20V

Packaging :

Tube

Number of Elements :

1

RoHS Status :

RoHS Compliant

Package / Case :

TO-220-3 Full Pack

Switching Energy :

60μJ (on), 80μJ (off)

Number of Terminations :

3

Fall Time-Max (tf) :

96ns

Collector Emitter Voltage (VCEO) :

2.6V

Test Condition :

480V, 6.5A, 50 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 6.5A

ECCN Code :

EAR99

Current Rating :

11.8A

Current - Collector Pulsed (Icm) :

52A

Height :

14.224mm

JEDEC-95 Code :

TO-220AB

Gate Charge :

26nC

Termination :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

300 ns

Element Configuration :

Dual

Published :

2004

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

600V

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Case Connection :

Isolated

Max Power Dissipation :

34W

Number of Pins :

3

REACH SVHC :

No SVHC

Width :

4.826mm

Td (on/off) @ 25°C :

22ns/110ns

Input Type :

Standard

Gate-Emitter Thr Voltage-Max :

6V

Length :

10.7442mm