IRG4IBC20FDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Through Hole

Lead Free :

Lead Free

Package / Case :

TO-220-3 Full Pack

Collector Emitter Saturation Voltage :

2V

Case Connection :

Isolated

Td (on/off) @ 25°C :

43ns/240ns

Gate-Emitter Voltage-Max :

20V

Length :

10.7442mm

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 9A

Reverse Recovery Time :

37 ns

RoHS Status :

ROHS3 Compliant

Transistor Application :

POWER CONTROL

JEDEC-95 Code :

TO-220AB

Gate-Emitter Thr Voltage-Max :

6V

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

600V

Switching Energy :

250μJ (on), 640μJ (off)

Rise Time :

20ns

Gate Charge :

27nC

Collector Emitter Voltage (VCEO) :

2V

Max Power Dissipation :

34W

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Element Configuration :

Single

Width :

4.826mm

Radiation Hardening :

No

ECCN Code :

EAR99

Mount :

Through Hole

Test Condition :

480V, 9A, 50 Ω, 15V

Turn Off Time-Nom (toff) :

610 ns

Turn On Time :

63 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2000

Current - Collector Pulsed (Icm) :

64A

Number of Elements :

1

Number of Terminations :

3

Current Rating :

14.3A

Power Dissipation :

34W

Input Type :

Standard

Collector Emitter Breakdown Voltage :

600V

Number of Pins :

3

Max Collector Current :

14.3A

Height :

16.129mm