IRG4IBC10UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Number of Terminations :

3

Turn Off Time-Nom (toff) :

345 ns

Collector Emitter Voltage (VCEO) :

2.6V

Length :

10.7442mm

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Published :

1999

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 5A

Gate-Emitter Thr Voltage-Max :

6V

Case Connection :

Isolated

Mount :

Through Hole

Current - Collector Pulsed (Icm) :

27A

Factory Lead Time :

16 Weeks

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Width :

4.826mm

Collector Emitter Saturation Voltage :

2.15V

Lead Free :

Lead Free

Transistor Application :

POWER CONTROL

Fall Time-Max (tf) :

210ns

Current Rating :

6.8A

Reverse Recovery Time :

28 ns

Gate Charge :

15nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

16.129mm

Test Condition :

480V, 5A, 100 Ω, 15V

Input Type :

Standard

Max Power Dissipation :

25W

Additional Feature :

ULTRA FAST

Package / Case :

TO-220-3 Full Pack

Rise Time :

16ns

Collector Emitter Breakdown Voltage :

600V

Termination :

Through Hole

Gate-Emitter Voltage-Max :

20V

Number of Pins :

3

Voltage - Rated DC :

600V

Radiation Hardening :

No

Turn On Time :

56 ns

Element Configuration :

Single

Power Dissipation :

25W

Max Collector Current :

6.8A

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Switching Energy :

140μJ (on), 120μJ (off)

Td (on/off) @ 25°C :

40ns/87ns

Packaging :

Tube