IRG4CC30FB
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- Mfr.Part #
- IRG4CC30FB
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT CHIP
- Stock
- 16,073
- In Stock ：
- 16,073
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Vce(on) (Max) @ Vge, Ic :
- 1.7V @ 15V, 6A
- Mounting Type :
- Surface Mount
- Transistor Application :
- POWER CONTROL
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- UPPER
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Transistor Element Material :
- SILICON
- Package / Case :
- Die
- Terminal Form :
- NO LEAD
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-XUUC-N2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Input Type :
- Standard
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-609 Code :
- e0
- Surface Mount :
- yes
- Additional Feature :
- FAST SPEED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate-Emitter Thr Voltage-Max :
- 6V
- Datasheets
- IRG4CC30FB
IRG4CC30FB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4CC30FB Description
The IRG4CC30FB is an IGBT Die in Wafer Form. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.
IRG4CC30FB Features
-
600 V
-
Size 3
-
Fast Speed
-
6" Wafer
IRG4CC30FB Applications
-
Consumer electronics
-
Industrial technology
-
The energy sector
-
Aerospace electronic devices
-
Transportation
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