IRG4BC40W-SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

110μJ (on), 230μJ (off)

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

160A

Gate Charge :

98nC

REACH SVHC :

No SVHC

Additional Feature :

LOW CONDUCTION LOSS

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

POWER CONTROL

Turn On Delay Time :

27 ns

Current Rating :

40A

Turn-Off Delay Time :

100 ns

Collector Emitter Saturation Voltage :

2.05V

Height :

4.83mm

Max Collector Current :

40A

Rise Time :

23ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Mount :

Surface Mount, Through Hole

Power Dissipation :

160W

Element Configuration :

Dual

Width :

4.826mm

Transistor Element Material :

SILICON

Packaging :

Tube

Voltage - Rated DC :

600V

Test Condition :

480V, 20A, 10 Ω, 15V

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Gate-Emitter Voltage-Max :

20V

Collector Emitter Voltage (VCEO) :

2.5V

Operating Temperature :

-55°C~150°C TJ

Length :

10.668mm

Gate-Emitter Thr Voltage-Max :

6V

Turn On Time :

48 ns

Max Power Dissipation :

160W

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

JESD-609 Code :

e3

Td (on/off) @ 25°C :

27ns/100ns

Terminal Position :

Single

Number of Pins :

3

Turn Off Time-Nom (toff) :

294 ns

Peak Reflow Temperature (Cel) :

260

Published :

2004

Terminal Form :

Gull wing

Fall Time-Max (tf) :

110ns

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

600V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

2

Input Type :

Standard