IRG4BC40SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Fall Time-Max (tf) :

570ns

Number of Pins :

3

Terminal Position :

Single

Gate-Emitter Thr Voltage-Max :

6V

REACH SVHC :

No SVHC

Switching Energy :

450μJ (on), 6.5mJ (off)

Power Dissipation :

160W

Transistor Element Material :

SILICON

Gate-Emitter Voltage-Max :

20V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

160W

Input Type :

Standard

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Collector Emitter Saturation Voltage :

1.5V

Turn On Delay Time :

22 ns

Transistor Application :

POWER CONTROL

Number of Elements :

1

Mounting Type :

Through Hole

ECCN Code :

EAR99

Radiation Hardening :

No

Max Collector Current :

60A

Td (on/off) @ 25°C :

22ns/650ns

Turn Off Time-Nom (toff) :

1940 ns

Width :

4.826mm

Current - Collector Pulsed (Icm) :

120A

Gate Charge :

100nC

Mount :

Surface Mount, Through Hole

Lead Free :

Lead Free

Turn On Time :

44 ns

Package / Case :

TO-220-3

Height :

16.51mm

Collector Emitter Voltage (VCEO) :

1.5V

Vce(on) (Max) @ Vge, Ic :

1.5V @ 15V, 31A

Length :

10.668mm

Turn-Off Delay Time :

650 ns

JEDEC-95 Code :

TO-220AB

Collector Emitter Breakdown Voltage :

600V

Test Condition :

480V, 31A, 10 Ω, 15V

Factory Lead Time :

16 Weeks

Case Connection :

COLLECTOR

Element Configuration :

Dual

Number of Terminations :

3

Packaging :

Tube