IRG4BC40KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Width :

4.69mm

Factory Lead Time :

16 Weeks

Power Dissipation :

160W

Rise Time :

18ns

Number of Elements :

1

Number of Terminations :

3

Current Rating :

42A

Height :

8.77mm

Radiation Hardening :

No

Gate-Emitter Thr Voltage-Max :

6V

Mount :

Through Hole

Transistor Application :

Motor Control

Gate Charge :

120nC

Td (on/off) @ 25°C :

30ns/140ns

Turn Off Time-Nom (toff) :

340 ns

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Case Connection :

COLLECTOR

Switching Energy :

620μJ (on), 330μJ (off)

Current - Collector Pulsed (Icm) :

84A

ECCN Code :

EAR99

Termination :

Through Hole

Collector Emitter Voltage (VCEO) :

2.6V

Length :

10.54mm

Collector Emitter Saturation Voltage :

2.6V

Turn On Time :

48 ns

Test Condition :

480V, 25A, 10 Ω, 15V

Transistor Element Material :

SILICON

Fall Time-Max (tf) :

210ns

Voltage - Rated DC :

600V

Package / Case :

TO-220-3

Input Type :

Standard

Additional Feature :

ULTRA FAST

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 25A

Lead Free :

Lead Free

Max Collector Current :

42A

REACH SVHC :

No SVHC

Max Power Dissipation :

160W

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Published :

2000

RoHS Status :

ROHS3 Compliant

Gate-Emitter Voltage-Max :

20V

Collector Emitter Breakdown Voltage :

600V

Packaging :

Tube

Element Configuration :

Single