IRG4BC40FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Test Condition :

480V, 27A, 10 Ω, 15V

Gate-Emitter Voltage-Max :

20V

ECCN Code :

EAR99

Packaging :

Tube

Transistor Application :

POWER CONTROL

Terminal Position :

Single

Element Configuration :

Dual

Turn On Time :

46 ns

Length :

10.54mm

Gate-Emitter Thr Voltage-Max :

6V

Termination :

Through Hole

Turn-Off Delay Time :

240 ns

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

Width :

4.69mm

Mount :

Through Hole

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Rise Time :

18ns

Max Collector Current :

49A

Turn Off Time-Nom (toff) :

690 ns

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Terminations :

3

Published :

2000

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 27A

Td (on/off) @ 25°C :

26ns/240ns

Current - Collector Pulsed (Icm) :

196A

Factory Lead Time :

16 Weeks

Gate Charge :

100nC

Turn On Delay Time :

26 ns

Collector Emitter Voltage (VCEO) :

1.7V

Radiation Hardening :

No

Number of Pins :

3

Weight :

6.000006g

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

160W

Package / Case :

TO-220-3

Voltage - Rated DC :

600V

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Height :

8.77mm

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Switching Energy :

370μJ (on), 1.81mJ (off)

Collector Emitter Saturation Voltage :

1.7V

Power Dissipation :

160W

Current Rating :

49A

Additional Feature :

FAST SWITCHING