IRG4BC40FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

600V

REACH SVHC :

No SVHC

Rise Time :

18ns

Termination :

Through Hole

Switching Energy :

370μJ (on), 1.81mJ (off)

Package / Case :

TO-220-3

Turn Off Time-Nom (toff) :

690 ns

Current Rating :

49A

Gate-Emitter Voltage-Max :

20V

Transistor Element Material :

SILICON

Height :

8.77mm

Additional Feature :

FAST SWITCHING

Collector Emitter Saturation Voltage :

1.7V

Transistor Application :

POWER CONTROL

Lead Free :

Lead Free

Turn On Delay Time :

26 ns

Terminal Position :

Single

Gate-Emitter Thr Voltage-Max :

6V

Max Power Dissipation :

160W

Test Condition :

480V, 27A, 10 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 27A

Mount :

Through Hole

Width :

4.69mm

Number of Terminations :

3

Packaging :

Tube

Gate Charge :

100nC

Radiation Hardening :

No

Power Dissipation :

160W

Case Connection :

COLLECTOR

Current - Collector Pulsed (Icm) :

196A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

1.7V

Voltage - Rated DC :

600V

ECCN Code :

EAR99

Published :

2000

Weight :

6.000006g

Max Collector Current :

49A

Input Type :

Standard

Turn On Time :

46 ns

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Length :

10.54mm

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Td (on/off) @ 25°C :

26ns/240ns

Turn-Off Delay Time :

240 ns

Polarity/Channel Type :

N-Channel

Number of Pins :

3