IRG4BC30WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Max Collector Current :

23A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Switching Energy :

130µJ (on), 130µJ (off)

JEDEC-95 Code :

TO-220AB

Published :

2003

Transistor Element Material :

SILICON

Element Configuration :

Dual

Power Dissipation :

100W

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Collector Emitter Breakdown Voltage :

600V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Rise Time :

17ns

Turn On Time :

41 ns

Collector Emitter Voltage (VCEO) :

2.7V

Max Power Dissipation :

100W

Width :

4.69mm

Additional Feature :

LOW CONDUCTION LOSS

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Turn Off Time-Nom (toff) :

300 ns

Fall Time-Max (tf) :

100ns

Collector Emitter Saturation Voltage :

2.7V

Td (on/off) @ 25°C :

25ns/99ns

Gate-Emitter Voltage-Max :

20V

Packaging :

Tube

Transistor Application :

POWER CONTROL

Turn-Off Delay Time :

99 ns

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Contains Lead, Lead Free

Termination :

Through Hole

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

92A

Weight :

6.000006g

Gate Charge :

51nC

Number of Elements :

1

Current Rating :

23A

Case Connection :

COLLECTOR

Terminal Position :

Single

Test Condition :

480V, 12A, 23 Ω, 15V

Voltage - Rated DC :

600V

Mount :

Through Hole

Number of Pins :

3

Turn On Delay Time :

25 ns

Input Type :

Standard

Gate-Emitter Thr Voltage-Max :

6V

Height :

8.77mm

Length :

10.54mm