IRG4BC30WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

2.7V

Max Power Dissipation :

100W

Voltage - Rated DC :

600V

Test Condition :

480V, 12A, 23 Ω, 15V

Switching Energy :

130µJ (on), 130µJ (off)

Transistor Application :

POWER CONTROL

Termination :

Through Hole

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

92A

Number of Elements :

1

Radiation Hardening :

No

Gate Charge :

51nC

Factory Lead Time :

16 Weeks

Turn Off Time-Nom (toff) :

300 ns

Power Dissipation :

100W

Turn On Delay Time :

25 ns

ECCN Code :

EAR99

Weight :

6.000006g

Max Collector Current :

23A

Case Connection :

COLLECTOR

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Element Configuration :

Dual

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

2.7V

Collector Emitter Breakdown Voltage :

600V

Width :

4.69mm

Operating Temperature :

-55°C~150°C TJ

Current Rating :

23A

Gate-Emitter Thr Voltage-Max :

6V

Td (on/off) @ 25°C :

25ns/99ns

Published :

2003

Additional Feature :

LOW CONDUCTION LOSS

Turn On Time :

41 ns

Turn-Off Delay Time :

99 ns

Number of Terminations :

3

Fall Time-Max (tf) :

100ns

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Height :

8.77mm

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Input Type :

Standard

Packaging :

Tube

REACH SVHC :

No SVHC

Gate-Emitter Voltage-Max :

20V

Lead Free :

Contains Lead, Lead Free

Length :

10.54mm

Rise Time :

17ns

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant