IRG4BC30W

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Qualification Status :

Not Qualified

Gate Charge :

51nC

Transistor Application :

POWER CONTROL

Power - Max :

100W

Mounting Type :

Through Hole

Published :

2000

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Current - Collector Pulsed (Icm) :

92A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

300 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

600V

JEDEC-95 Code :

TO-220AB

Test Condition :

480V, 12A, 23 Ω, 15V

Surface Mount :

No

Current - Collector (Ic) (Max) :

23A

Input Type :

Standard

Configuration :

Single

Packaging :

Tube

Additional Feature :

LOW CONDUCTION LOSS

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Number of Terminations :

3

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Switching Energy :

130µJ (on), 130µJ (off)

Number of Elements :

1

Td (on/off) @ 25°C :

25ns/99ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

Turn On Time :

41 ns