IRG4BC30UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

380μJ (on), 160μJ (off)

Packaging :

Tube

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 12A

Power Dissipation :

100W

Reverse Recovery Time :

42 ns

Input Type :

Standard

Gate-Emitter Thr Voltage-Max :

6V

Turn On Delay Time :

40 ns

Package / Case :

TO-220-3

Collector Emitter Saturation Voltage :

1.95V

Rise Time :

21ns

Gate Charge :

50nC

Current Rating :

23A

Current - Collector Pulsed (Icm) :

92A

Voltage - Rated DC :

600V

Td (on/off) @ 25°C :

40ns/91ns

Turn-Off Delay Time :

91 ns

Published :

2000

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

600V

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

2.1V

Max Collector Current :

23A

Height :

16.51mm

REACH SVHC :

No SVHC

Mount :

Through Hole

Element Configuration :

Single

Case Connection :

COLLECTOR

Test Condition :

480V, 12A, 23 Ω, 15V

Number of Elements :

1

Termination :

Through Hole

Gate-Emitter Voltage-Max :

20V

Length :

10.668mm

Width :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Max Power Dissipation :

100W

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Turn Off Time-Nom (toff) :

300 ns

Mounting Type :

Through Hole

ECCN Code :

EAR99

Turn On Time :

62 ns

Number of Terminations :

3

Transistor Application :

POWER CONTROL