IRG4BC30KDSTRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Switching Energy :

600μJ (on), 580μJ (off)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Base Part Number :

IRG4BC30KD-SPBF

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Turn Off Time-Nom (toff) :

370 ns

Gate-Emitter Thr Voltage-Max :

6V

Gate Charge :

67nC

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

100W

Published :

2000

Number of Terminations :

2

Number of Elements :

1

Input Type :

Standard

Td (on/off) @ 25°C :

60ns/160ns

Gate-Emitter Voltage-Max :

20V

Max Collector Current :

28A

Collector Emitter Breakdown Voltage :

600V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Fall Time-Max (tf) :

120ns

Radiation Hardening :

No

Case Connection :

COLLECTOR

Transistor Application :

Motor Control

Collector Emitter Voltage (VCEO) :

2.7V

Additional Feature :

LOW CONDUCTION LOSS

Current - Collector Pulsed (Icm) :

56A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Power - Max :

100W

Test Condition :

480V, 16A, 23 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 16A

Factory Lead Time :

13 Weeks

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Turn On Time :

100 ns

Reverse Recovery Time :

42 ns