IRG4BC30KD-SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

ECCN Code :

EAR99

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Gate Charge :

67nC

Number of Terminations :

2

Number of Pins :

3

Element Configuration :

Single

JESD-609 Code :

e3

Turn On Delay Time :

60 ns

Td (on/off) @ 25°C :

60ns/160ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 16A

Additional Feature :

LOW CONDUCTION LOSS

Base Part Number :

IRG4BC30KD-SPBF

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

370 ns

Collector Emitter Breakdown Voltage :

600V

Current - Collector Pulsed (Icm) :

56A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Width :

9.65mm

Length :

10.668mm

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Gate-Emitter Voltage-Max :

20V

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

2.7V

Transistor Element Material :

SILICON

Current Rating :

28A

Reverse Recovery Time :

42 ns

Mount :

Surface Mount

Turn On Time :

100 ns

Transistor Application :

Motor Control

Gate-Emitter Thr Voltage-Max :

6V

Time@Peak Reflow Temperature-Max (s) :

30

Max Collector Current :

28A

Power Dissipation :

100W

Case Connection :

COLLECTOR

Published :

2004

Fall Time-Max (tf) :

120ns

REACH SVHC :

No SVHC

Height :

4.699mm

Switching Energy :

600μJ (on), 580μJ (off)

Rise Time :

42ns

Voltage - Rated DC :

600V

Test Condition :

480V, 16A, 23 Ω, 15V

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

2.7V

Polarity/Channel Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Max Power Dissipation :

100W

Turn-Off Delay Time :

160 ns

Input Type :

Standard