IRG4BC30FD1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Termination :

Through Hole

Mounting Type :

Through Hole

Power Dissipation :

100W

Height :

15.24mm

RoHS Status :

RoHS Compliant

Turn On Time :

46 ns

Gate Charge :

57nC

REACH SVHC :

No SVHC

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.8V

Length :

10.54mm

Rise Time :

24ns

Gate-Emitter Thr Voltage-Max :

6V

JEDEC-95 Code :

TO-220AB

Turn Off Time-Nom (toff) :

740 ns

Case Connection :

COLLECTOR

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 17A

Number of Elements :

1

Mount :

Through Hole

Max Power Dissipation :

100W

Element Configuration :

Single

Td (on/off) @ 25°C :

22ns/250ns

Gate-Emitter Voltage-Max :

20V

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Published :

2000

Switching Energy :

370μJ (on), 1.42mJ (off)

Test Condition :

480V, 17A, 23 Ω, 15V

Current - Collector Pulsed (Icm) :

124A

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

600V

Number of Terminations :

3

Package / Case :

TO-220-3

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

1.8V

Collector Emitter Breakdown Voltage :

600V

Current Rating :

31A

Max Collector Current :

31A

Width :

4.69mm

ECCN Code :

EAR99

Reverse Recovery Time :

46 ns

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL