IRG4BC30FD-SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Input Type :

Standard

Length :

10.668mm

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

1.8V

Width :

9.652mm

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Reverse Recovery Time :

42 ns

Td (on/off) @ 25°C :

42ns/230ns

Gate Charge :

51nC

Height :

4.699mm

Current Rating :

31A

Turn Off Time-Nom (toff) :

620 ns

JESD-609 Code :

e3

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

100W

Test Condition :

480V, 17A, 23 Ω, 15V

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 17A

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Gate-Emitter Thr Voltage-Max :

6V

Turn On Time :

69 ns

Operating Temperature :

-55°C~150°C TJ

Rise Time :

27ns

Published :

2010

REACH SVHC :

No SVHC

Current - Collector Pulsed (Icm) :

124A

Case Connection :

COLLECTOR

Voltage - Rated DC :

600V

Gate-Emitter Voltage-Max :

20V

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

Transistor Application :

POWER CONTROL

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.8V

Mount :

Surface Mount

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Switching Energy :

630μJ (on), 1.39mJ (off)

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

100W

Max Collector Current :

31A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Collector Emitter Breakdown Voltage :

600V