IRG4BC30F-SPBF
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- Mfr.Part #
- IRG4BC30F-SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 31A 100W D2PAK
- Stock
- 16,717
- In Stock ：
- 16,717
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Voltage (VCEO) :
- 1.8V
- Supplier Device Package :
- D2PAK
- Collector Emitter Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 100W
- RoHS Status :
- RoHS Compliant
- Vce(on) (Max) @ Vge, Ic :
- 1.8V @ 15V, 17A
- Published :
- 2000
- Max Operating Temperature :
- 150°C
- Height :
- 4.83mm
- Element Configuration :
- Single
- Power Dissipation :
- 100W
- Current Rating :
- 31A
- Width :
- 4.699mm
- Min Operating Temperature :
- -55°C
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Rise Time :
- 15ns
- Voltage - Rated DC :
- 600V
- Td (on/off) @ 25°C :
- 21ns/200ns
- Current - Collector Pulsed (Icm) :
- 120A
- Lead Free :
- Lead Free
- Power - Max :
- 100W
- Mount :
- Surface Mount, Through Hole
- Factory Lead Time :
- 11 Weeks
- Radiation Hardening :
- No
- Max Collector Current :
- 31A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Type :
- Standard
- Base Part Number :
- IRG4BC30F-SPBF
- Test Condition :
- 480V, 17A, 23Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Length :
- 10.5156mm
- Gate Charge :
- 51nC
- Weight :
- 260.39037mg
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 31A
- Switching Energy :
- 230μJ (on), 1.18mJ (off)
- Datasheets
- IRG4BC30F-SPBF
IRG4BC30F-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC30F-SPBF Description
IRG4BC30F-SPBF is a 600V insulated gate bipolar transistor. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. The Infineon IRG4BC30F-SPBF can be designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC30F-SPBF is in the TO‐220AB package with 100W power dissipation.
IRG4BC30F-SPBF Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry-standard TO-220AB package
Generation 4 IGBTs offer the highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
IRG4BC30F-SPBF Applications
Automotive
Advanced driver assistance systems (ADAS)
Industrial
Electronic point of sale (EPOS)
Enterprise systems
Enterprise machine
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