IRG4BC20UPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Lead Free :

Contains Lead, Lead Free

Operating Temperature :

-55°C~150°C TJ

Rise Time :

13ns

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Turn On Delay Time :

21 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Thr Voltage-Max :

6V

Gate-Emitter Voltage-Max :

20V

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Element Configuration :

Single

Mount :

Through Hole

Published :

2000

Termination :

Through Hole

Power Dissipation :

60W

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 6.5A

Turn Off Time-Nom (toff) :

330 ns

Current - Collector Pulsed (Icm) :

52A

Switching Energy :

100μJ (on), 120μJ (off)

Width :

4.826mm

Turn On Time :

34 ns

Factory Lead Time :

16 Weeks

Turn-Off Delay Time :

86 ns

Max Collector Current :

13A

Collector Emitter Saturation Voltage :

2.1V

Number of Pins :

3

Max Power Dissipation :

60W

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

600V

Gate Charge :

27nC

Collector Emitter Voltage (VCEO) :

2.1V

Test Condition :

480V, 6.5A, 50 Ω, 15V

Length :

10.668mm

Packaging :

Tube

REACH SVHC :

No SVHC

Fall Time-Max (tf) :

180ns

Current Rating :

13A

Td (on/off) @ 25°C :

21ns/86ns

Radiation Hardening :

No

Additional Feature :

ULTRA FAST

Voltage - Rated DC :

600V

Input Capacitance :

530pF

Number of Elements :

1

Height :

16.51mm

Package / Case :

TO-220-3

Input Type :

Standard