IRG4BC20SPBF
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- Mfr.Part #
- IRG4BC20SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IRG4BC20 - DISCRETE IGBT WITHOUT
- Stock
- 37,268
- In Stock ：
- 37,268
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Voltage - Rated DC :
- 600V
- Number of Pins :
- 3
- Rise Time :
- 9.7ns
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Termination :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Td (on/off) @ 25°C :
- 27ns/540ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Published :
- 2000
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Length :
- 10.54mm
- Turn On Time :
- 38 ns
- Max Collector Current :
- 19A
- Gate-Emitter Thr Voltage-Max :
- 6V
- Gate Charge :
- 27nC
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Element Configuration :
- Dual
- Turn On Delay Time :
- 27 ns
- Max Power Dissipation :
- 60W
- Width :
- 4.69mm
- Mounting Type :
- Through Hole
- Power Dissipation :
- 60W
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 600V
- Current Rating :
- 19A
- Input Type :
- Standard
- RoHS Status :
- ROHS3 Compliant
- Turn Off Time-Nom (toff) :
- 1540 ns
- REACH SVHC :
- No SVHC
- Test Condition :
- 480V, 10A, 50 Ω, 15V
- Vce(on) (Max) @ Vge, Ic :
- 1.6V @ 15V, 10A
- Packaging :
- Tube
- Transistor Application :
- POWER CONTROL
- Height :
- 8.77mm
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1.4V
- Turn-Off Delay Time :
- 540 ns
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Terminal Position :
- Single
- Current - Collector Pulsed (Icm) :
- 38A
- Switching Energy :
- 120μJ (on), 2.05mJ (off)
- JEDEC-95 Code :
- TO-220AB
- Gate-Emitter Voltage-Max :
- 20V
- Factory Lead Time :
- 16 Weeks
- Datasheets
- IRG4BC20SPBF
IRG4BC20SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC20SPBF Description
The IRG4BC20SPBF is an IGBT 600 V 19 A 60 W Through Hole TO-220AB. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IRG4BC20SPBF Features
-
Industry standard TO-220AB package
-
Lead-Free
-
Standard: optimized for minimum saturation voltage and low operating frequencies (＜1kHz)
-
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
-
Generation 4 IGBTs offer highest efficiency available
-
IGBTs optimized for specified application conditions
IRG4BC20SPBF Applications
-
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
-
It is used in UPS (Uninterruptible Power Supply) system.
-
It is used in AC and DC motor drives offering speed control.
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It is used in chopper and inverters.
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It is used in solar inverters.
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