IRG4BC20KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Case Connection :

COLLECTOR

Published :

2000

Collector Emitter Voltage (VCEO) :

2.8V

Lead Free :

Contains Lead, Lead Free

Power Dissipation :

60W

Number of Pins :

3

Reverse Recovery Time :

37 ns

Test Condition :

480V, 9A, 50 Ω, 15V

Turn-Off Delay Time :

180 ns

Length :

10.5156mm

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Turn Off Time-Nom (toff) :

380 ns

Collector Emitter Saturation Voltage :

2.27V

Factory Lead Time :

16 Weeks

Gate-Emitter Thr Voltage-Max :

6V

Weight :

6.000006g

Turn On Delay Time :

54 ns

Max Power Dissipation :

60W

Max Collector Current :

16A

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 9A

Transistor Application :

Motor Control

Gate Charge :

34nC

Number of Elements :

1

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Fall Time-Max (tf) :

110ns

Turn On Time :

88 ns

Height :

8.77mm

Rise Time :

34ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

54ns/180ns

Input Type :

Standard

Voltage - Rated DC :

600V

Width :

4.69mm

ECCN Code :

EAR99

Mounting Type :

Through Hole

Current - Collector Pulsed (Icm) :

32A

Package / Case :

TO-220-3

Current Rating :

16A

Gate-Emitter Voltage-Max :

20V

Switching Energy :

340μJ (on), 300μJ (off)

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

REACH SVHC :

No SVHC