IRG4BC20FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate Charge :

27nC

Turn On Time :

41 ns

Factory Lead Time :

16 Weeks

Td (on/off) @ 25°C :

24ns/190ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

Additional Feature :

FAST SWITCHING

Width :

4.69mm

Input Type :

Standard

Case Connection :

COLLECTOR

Height :

15.24mm

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Max Collector Current :

16A

Terminal Position :

Single

Number of Elements :

1

Max Power Dissipation :

60W

Power Dissipation :

60W

Turn-Off Delay Time :

190 ns

Current Rating :

16A

Packaging :

Tube

Rise Time :

17ns

Collector Emitter Breakdown Voltage :

600V

Turn Off Time-Nom (toff) :

640 ns

Element Configuration :

Dual

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

6V

Termination :

Through Hole

Length :

10.5156mm

Mounting Type :

Through Hole

Radiation Hardening :

No

Mount :

Through Hole

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

600V

Test Condition :

480V, 9A, 50 Ω, 15V

Published :

1997

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

REACH SVHC :

No SVHC

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 9A

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

2V

Switching Energy :

70μJ (on), 600μJ (off)

Lead Free :

Contains Lead, Lead Free

Collector Emitter Saturation Voltage :

1.66V

Current - Collector Pulsed (Icm) :

64A

Turn On Delay Time :

24 ns

Gate-Emitter Voltage-Max :

20V