IRFL024NTRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

55V

JESD-30 Code :

R-PDSO-G4

Turn On Delay Time :

8.1 ns

JESD-609 Code :

e3

Lead Free :

Contains Lead, Lead Free

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Fall Time (Typ) :

17.7 ns

Power Dissipation :

2.1W

Package / Case :

TO-261-4, TO-261AA

Threshold Voltage :

4V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

22.2 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Termination :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

0.0028A

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Published :

1999

Transistor Application :

SWITCHING

Series :

HEXFET®

Resistance :

75mOhm

Packaging :

Tape and Reel (TR)

Recovery Time :

53 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

FET Type :

N-Channel

Rise Time :

13.4ns

Number of Pins :

3

Power Dissipation-Max :

1W Ta

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Element Configuration :

Single

Dual Supply Voltage :

55V

Width :

3.7mm

Additional Feature :

AVALANCHE RATED

Height :

1.4478mm

Mount :

Surface Mount

Length :

6.6802mm

ECCN Code :

EAR99

Current Rating :

2.8A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Voltage - Rated DC :

55V

Continuous Drain Current (ID) :

2.8A

Nominal Vgs :

4 V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

75m Ω @ 2.8A, 10V

Gate Charge (Qg) (Max) @ Vgs :

18.3nC @ 10V