IRFL024NTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.1W

JESD-609 Code :

e3

Continuous Drain Current (ID) :

2.8A

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Width :

3.7mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1999

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

1W Ta

Length :

6.6802mm

Height :

1.4478mm

Number of Terminations :

4

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

4 V

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

55V

Transistor Element Material :

SILICON

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

8.1 ns

Voltage - Rated DC :

55V

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

18.3nC @ 10V

Rise Time :

13.4ns

FET Type :

N-Channel

Terminal Position :

Dual

Recovery Time :

53 ns

Drain Current-Max (Abs) (ID) :

0.0028A

Resistance :

75mOhm

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

22.2 ns

Mount :

Surface Mount

Current Rating :

2.8A

Fall Time (Typ) :

17.7 ns

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

JESD-30 Code :

R-PDSO-G4

Lead Free :

Contains Lead, Lead Free

Dual Supply Voltage :

55V

Vgs (Max) :

±20V

Package / Case :

TO-261-4, TO-261AA

REACH SVHC :

No SVHC

Radiation Hardening :

No

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

75m Ω @ 2.8A, 10V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260