IRFL024Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Power Dissipation-Max :

1W Ta

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Transistor Element Material :

SILICON

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G4

Number of Terminations :

4

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Finish :

NOT SPECIFIED

Series :

HEXFET®

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

57.5m Ω @ 3.1A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Package / Case :

TO-261-4, TO-261AA

Vgs (Max) :

±20V

Published :

1999

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V