IRFL014NTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Nominal Vgs :

4 V

Series :

HEXFET®

Case Connection :

DRAIN

Voltage - Rated DC :

55V

Recovery Time :

61 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

12 ns

Resistance :

160mOhm

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain Current-Max (Abs) (ID) :

2.7A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.1W

JESD-30 Code :

R-PDSO-G4

Drain to Source Breakdown Voltage :

55V

Threshold Voltage :

4V

Lead Free :

Lead Free

Length :

6.6802mm

Height :

1.4478mm

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.9A, 10V

Mount :

Surface Mount

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Current Rating :

1.9A

Rise Time :

7.1ns

Element Configuration :

Single

Number of Pins :

3

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Width :

3.7mm

Continuous Drain Current (ID) :

1.9A

Terminal Position :

Dual

Number of Elements :

1

Power Dissipation-Max :

1W Ta

Terminal Form :

Gull wing

Fall Time (Typ) :

3.3 ns

Number of Terminations :

4

Turn On Delay Time :

6.6 ns