IRFL024ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0575Ohm

Package / Case :

TO-261-4, TO-261AA

Published :

1999

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

57.5m Ω @ 3.1A, 10V

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

55V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Drain to Source Voltage (Vdss) :

55V

JESD-30 Code :

R-PDSO-G4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Terminal Form :

Gull wing

JESD-609 Code :

e3

Surface Mount :

yes

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

5.1A

Power Dissipation-Max :

1W Ta

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®