IRFL024NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

JESD-609 Code :

e3

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

55V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

18.3nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1W Ta

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

1999

Rds On (Max) @ Id, Vgs :

75m Ω @ 2.8A, 10V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.075Ohm

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

20 Weeks

Terminal Form :

Gull wing

ECCN Code :

EAR99

Surface Mount :

yes

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

2.8A

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Mounting Type :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

FET Type :

N-Channel

Number of Elements :

1

Transistor Application :

SWITCHING

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-G4

Number of Terminations :

4

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

55V