IRFHS9301TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.1W Ta

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

25 ns

Current - Continuous Drain (Id) @ 25°C :

6A Ta 13A Tc

Number of Pins :

6

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Width :

2.1mm

Number of Terminations :

6

REACH SVHC :

No SVHC

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

6A

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Nominal Vgs :

-1.8 V

Turn-Off Delay Time :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.1mm

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

Power Dissipation :

2.1W

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-30V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

52A

ECCN Code :

EAR99

Height :

950μm

Package / Case :

6-PowerVDFN

Lead Free :

Lead Free

Resistance :

37mOhm

Number of Elements :

1

Threshold Voltage :

-1.8V

Turn On Delay Time :

12 ns

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

6A

Rds On (Max) @ Id, Vgs :

37m Ω @ 7.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 25V

Rise Time :

80ns

Published :

2010