IRFHS8342TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Threshold Voltage :

1.8V

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

8.5A

Package / Case :

6-PowerVDFN

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

8.8A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Published :

2010

Resistance :

16mOhm

Number of Terminations :

6

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Power Dissipation-Max :

2.1W Ta

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Rise Time :

15ns

Nominal Vgs :

1.8 V

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta 19A Tc

Turn-Off Delay Time :

5.2 ns

FET Type :

N-Channel

Mount :

Surface Mount

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

16m Ω @ 8.5A, 10V

Transistor Application :

SWITCHING

Turn On Delay Time :

5.9 ns

Radiation Hardening :

No

Power Dissipation :

2.1W

Terminal Finish :

Matte Tin (Sn)