IRFHS8242TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

6

Gate Charge (Qg) (Max) @ Vgs :

10.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

653pF @ 10V

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

84A

Operating Temperature :

-55°C~150°C TJ

Rise Time :

19ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

FET Type :

N-Channel

Width :

2.1mm

Published :

2010

Power Dissipation :

2.1W

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

9.9A Ta 21A Tc

REACH SVHC :

No SVHC

Number of Elements :

1

Drain to Source Breakdown Voltage :

25V

Vgs (Max) :

±20V

Height :

950μm

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Number of Terminations :

6

Turn On Delay Time :

6.5 ns

Power Dissipation-Max :

2.1W Ta

Element Configuration :

Single

Continuous Drain Current (ID) :

9.9A

Fall Time (Typ) :

5.3 ns

Drain Current-Max (Abs) (ID) :

8.5A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Turn-Off Delay Time :

5.4 ns

Package / Case :

6-PowerVDFN

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Resistance :

13mOhm

Nominal Vgs :

1.8 V

Radiation Hardening :

No

Length :

2.1mm

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Rds On (Max) @ Id, Vgs :

13m Ω @ 8.5A, 10V