IRFHM9331TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

2.9972mm

Height :

1mm

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Number of Pins :

8

Rise Time :

27ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Avalanche Energy Rating (Eas) :

76 mJ

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Number of Terminations :

5

Published :

2009

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

-11A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

24A

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Power Dissipation-Max :

2.8W Ta

Turn-Off Delay Time :

72 ns

JESD-30 Code :

S-PDSO-N5

Transistor Application :

SWITCHING

Power Dissipation :

2.8W

Max Junction Temperature (Tj) :

150°C

Lead Free :

Lead Free

Turn On Delay Time :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Package / Case :

8-PowerTDFN

Fall Time (Typ) :

60 ns

Mounting Type :

Surface Mount

Threshold Voltage :

-1.8V

Width :

2.9972mm

Drive Voltage (Max Rds On,Min Rds On) :

10V 20V

Input Capacitance (Ciss) (Max) @ Vds :

1543pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

11A Ta 24A Tc

Pulsed Drain Current-Max (IDM) :

90A

Drain to Source Voltage (Vdss) :

30V

Number of Channels :

1

Series :

HEXFET®

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10m Ω @ 11A, 20V

Drain to Source Breakdown Voltage :

-30V

Terminal Finish :

Matte Tin (Sn)

Resistance :

14.6mOhm