IRFHM9331TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Turn On Delay Time :

11 ns

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

10mOhm @ 11A, 20V

Series :

HEXFET®

Package / Case :

8-PowerTDFN

Power Dissipation :

2.8W

Input Capacitance (Ciss) (Max) @ Vds :

1543pF @ 25V

Drain to Source Voltage (Vdss) :

30V

Height :

939.8μm

Width :

2.9972mm

Current - Continuous Drain (Id) @ 25°C :

11A Ta 24A Tc

Mount :

Surface Mount

Turn-Off Delay Time :

72 ns

REACH SVHC :

No SVHC

Rds On Max :

10 MΩ

Radiation Hardening :

No

Packaging :

Cut Tape (CT)

Number of Elements :

1

Supplier Device Package :

PQFN (3x3)

Fall Time (Typ) :

60 ns

Recovery Time :

96 ns

Element Configuration :

Single

Number of Pins :

8

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

27ns

Max Power Dissipation :

2.8W

Drain to Source Resistance :

14.6mOhm

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Published :

2011

Input Capacitance :

1.543nF

Drain to Source Breakdown Voltage :

-30V

Nominal Vgs :

-1.8 V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

25V

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

-11A

Threshold Voltage :

-1.8V

Length :

2.9972mm

Max Operating Temperature :

150°C