IRFHM8342TRPBF
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- Mfr.Part #
- IRFHM8342TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A 8PQFN
- Stock
- 1,341
- In Stock ：
- 1,341
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Terminal Form :
- Flat
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 10 Weeks
- Series :
- HEXFET®
- Power Dissipation-Max :
- 2.6W Ta 20W Tc
- Drain Current-Max (Abs) (ID) :
- 20A
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 5.6 ns
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 17A, 10V
- Number of Terminations :
- 5
- Input Capacitance (Ciss) (Max) @ Vds :
- 560pF @ 25V
- Turn-Off Delay Time :
- 7.6 ns
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 8.1 ns
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 4.5V
- ECCN Code :
- EAR99
- Threshold Voltage :
- 1.8V
- JESD-30 Code :
- S-PDSO-F5
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 10A
- Drain to Source Voltage (Vdss) :
- 30V
- Package / Case :
- 8-PowerTDFN
- Resistance :
- 13mOhm
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Number of Pins :
- 8
- Number of Channels :
- 1
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2013
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 30V
- Case Connection :
- DRAIN
- Rise Time :
- 30ns
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.35V @ 25µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- IRFHM8342TRPBF
N-Channel Tape & Reel (TR) 16m Ω @ 17A, 10V ±20V 560pF @ 25V 7.5nC @ 4.5V 30V 8-PowerTDFN
IRFHM8342TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 560pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 20A.When the device is turned off, a turn-off delay time of 7.6 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.1 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.8V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRFHM8342TRPBF Features
a continuous drain current (ID) of 10A
the turn-off delay time is 7.6 ns
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRFHM8342TRPBF Applications
There are a lot of Infineon Technologies
IRFHM8342TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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