IRFHM8334TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Terminal Form :

Flat

Number of Channels :

1

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

35 mJ

Vgs (Max) :

±20V

Published :

2013

Turn-Off Delay Time :

7 ns

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Power Dissipation-Max :

2.7W Ta 28W Tc

Rise Time :

14ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Number of Pins :

8

Continuous Drain Current (ID) :

13A

Lead Free :

Lead Free

Threshold Voltage :

1.8V

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 10V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

S-PDSO-F5

Fall Time (Typ) :

4.6 ns

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

25A

Series :

HEXFET®

Turn On Delay Time :

8.3 ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Power Dissipation :

2.7W

Package / Case :

8-PowerTDFN

Number of Terminations :

5

Drain-source On Resistance-Max :

0.009Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Factory Lead Time :

17 Weeks

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Mounting Type :

Surface Mount

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

9m Ω @ 20A, 10V