IRFHM8329TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

FET Type :

N-Channel

Power Dissipation :

2.6W

Pulsed Drain Current-Max (IDM) :

230A

Vgs (Max) :

±20V

Power Dissipation-Max :

2.6W Ta 33W Tc

Factory Lead Time :

39 Weeks

Fall Time (Typ) :

14 ns

Rise Time :

74ns

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.2V @ 25μA

Package / Case :

8-PowerTDFN

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Published :

2013

Continuous Drain Current (ID) :

16A

Case Connection :

DRAIN

Terminal Position :

Dual

Turn On Delay Time :

14 ns

Avalanche Energy Rating (Eas) :

43 mJ

Threshold Voltage :

1.7V

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

ECCN Code :

EAR99

Turn-Off Delay Time :

14 ns

Number of Terminations :

5

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 10V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 20A, 10V

Radiation Hardening :

No

JESD-30 Code :

S-PDSO-F5

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

16A Ta 57A Tc

Drain to Source Breakdown Voltage :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE