IRFHM831TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.5W

Pulsed Drain Current-Max (IDM) :

96A

Terminal Position :

Dual

Radiation Hardening :

No

Series :

HEXFET®

Published :

2013

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 12A, 10V

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Min Operating Temperature :

-55°C

Max Power Dissipation :

2.5W

Fall Time (Typ) :

4.7 ns

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Packaging :

Cut Tape (CT)

Rise Time :

12ns

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Turn-Off Delay Time :

6.2 ns

Length :

3.2766mm

Mount :

Surface Mount

Recovery Time :

22 ns

Width :

3.3mm

Package / Case :

8-PowerTDFN

Transistor Application :

SWITCHING

Height :

990.6μm

JESD-30 Code :

S-PDSO-N5

Continuous Drain Current (ID) :

14A

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

14A Ta 40A Tc

Number of Terminations :

5

REACH SVHC :

No SVHC

Nominal Vgs :

1.8 V

Avalanche Energy Rating (Eas) :

50 mJ

Turn On Delay Time :

6.9 ns