IRFHM830TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

9.2 ns

Length :

3.3mm

Rise Time :

25ns

Resistance :

6mOhm

Transistor Application :

SWITCHING

Radiation Hardening :

No

Continuous Drain Current (ID) :

21A

Number of Terminations :

5

Vgs (Max) :

±20V

JESD-30 Code :

S-PDSO-N5

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

21A Ta 40A Tc

Height :

1mm

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 20A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Turn-Off Delay Time :

13 ns

Drain Current-Max (Abs) (ID) :

40A

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.7W Ta 37W Tc

Width :

3.3mm

Published :

2010

Nominal Vgs :

1.8 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Series :

HEXFET®

Power Dissipation :

2.7W

RoHS Status :

ROHS3 Compliant

Package / Case :

8-VQFN Exposed Pad

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2155pF @ 25V

ECCN Code :

EAR99

FET Type :

N-Channel

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.8V

JESD-609 Code :

e3