IRFHM8228TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1667pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

19A Ta

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Mounting Type :

Surface Mount

Fall Time (Typ) :

6.2 ns

JESD-30 Code :

S-PDSO-F5

Package / Case :

8-PowerTDFN

Factory Lead Time :

10 Weeks

Mount :

Surface Mount

Radiation Hardening :

No

Transistor Application :

SWITCHING

Turn-Off Delay Time :

13 ns

Drain to Source Voltage (Vdss) :

25V

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 20A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Number of Pins :

8

Vgs (Max) :

±20V

Power Dissipation-Max :

2.8W Ta 34W Tc

REACH SVHC :

No SVHC

DS Breakdown Voltage-Min :

25V

Series :

HEXFET®

Turn On Delay Time :

11 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Rise Time :

22ns

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

65A

Published :

2013

Pulsed Drain Current-Max (IDM) :

260A

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

19A

Number of Terminations :

5

Threshold Voltage :

1.8V

Avalanche Energy Rating (Eas) :

50 mJ

Resistance :

4.2mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)