IRFHM4231TRPBF
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- Mfr.Part #
- IRFHM4231TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 40A 8PQFN
- Stock
- 57,699
- In Stock ：
- 57,699
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1270pF @ 13V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 8.7 ns
- Rise Time :
- 28ns
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- HEXFET®
- JESD-30 Code :
- S-PDSO-N5
- FET Type :
- N-Channel
- Package / Case :
- 8-PowerTDFN
- Number of Terminations :
- 5
- Turn-Off Delay Time :
- 12 ns
- Threshold Voltage :
- 1.6V
- Length :
- 3.3mm
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Power Dissipation-Max :
- 2.7W Ta 29W Tc
- Base Part Number :
- IRFHM4231
- Fall Time (Typ) :
- 5.9 ns
- Published :
- 2013
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.0046Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 25V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 13 Weeks
- Number of Pins :
- 8
- Vgs(th) (Max) @ Id :
- 2.1V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 42 mJ
- REACH SVHC :
- No SVHC
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Height :
- 900μm
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 30A, 10V
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 25V
- Contact Plating :
- Tin
- Continuous Drain Current (ID) :
- 22A
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 5mm
- Datasheets
- IRFHM4231TRPBF
N-Channel Tape & Reel (TR) 3.4m Ω @ 30A, 10V ±20V 1270pF @ 13V 20nC @ 10V 25V 8-PowerTDFN
IRFHM4231TRPBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 42 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1270pF @ 13V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 22A amps.It is [12 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.6V.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRFHM4231TRPBF Features
the avalanche energy rating (Eas) is 42 mJ
a continuous drain current (ID) of 22A
the turn-off delay time is 12 ns
a threshold voltage of 1.6V
a 25V drain to source voltage (Vdss)
IRFHM4231TRPBF Applications
There are a lot of Infineon Technologies
IRFHM4231TRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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